Publications

• DOE BES prefers sole acknowledgement to grants.
• If you have to acknowledge multiple grants, it is not sufficient to indicate which persons were supported by different grants, rather you have to call which elements of research resulted from the EFRC support.

3DFeM Publications list:

2023

1. Yongke Yan, Liwei D. Geng, Li-Qian Cheng, Xiaotian Li, Haoyang Leng, Ke Wang , Bed Poudel , Amin Nozariasbmarz , Mohan Sanghadasa, Susan Trolier-McKinstry , Qi-Ming Zhang , Yu U. Wang , Shashank Priya , Correlation between cation order/disorder and the electrocaloric effect in the MLCCs of complex perovskite ferroelectrics, Acta Materialia (2023), doi: https://doi.org/10.1016/j.actamat.2023.118990 
2. Zu, R., Ryu, G., Kelley, K.P., Baksa, S.M., Jacques, L.C., Wang, B., Ferri, K., He, J., Chen, L.-Q., Dabo, I., Trolier-McKinstry, S., Maria, J.-P. and Gopalan, V. (2023), Large Enhancements in Optical and Piezoelectric Properties in Ferroelectric Zn_1-xMg_xO Thin Films through Engineering Electronic and Ionic Anharmonicities. Adv. Phys. Res. 2300003. https://doi.org/10.1002/apxr.202300003 
3. Wanlin Zhu, Fan He, John Hayden, Jung In Yang, Pannawit Tipsawat, Jon-Paul Maria, Susan Trolier-McKinstry; Exceptional high temperature retention in Al₉₃B_0.07N films. Appl. Phys. Lett.5 June 2023; 122 (24): 242902. https://doi.org/10.1063/5.0152821 
4. Fields, S. S., Jaszewski, S. T., Lenox, M. K., Ihlefeld, J. F., Asymmetric Electrode Work Function Customization via Top Electrode Replacement in Ferroelectric and Field-Induced Ferroelectric Hafnium Zirconium Oxide Thin Films.  Mater. Interfaces2023, 10, 2202232. https://doi.org/10.1002/admi.202202232
5. Wanlin Zhu, Fan He, John Hayden, Jung In Yang, Pannawit Tipsawat, Jon-Paul Maria, Susan Trolier-McKinstry; Exceptional high temperature retention in Al₉₃B_0.07N films. Appl. Phys. Lett.5 June 2023; 122 (24): 242902. https://doi.org/10.1063/5.0152821
6. Liu, Y., Vasudevan, R.K., Kelley, K.P. et al.Learning the right channel in multimodal imaging: automated experiment in piezoresponse force microscopy. npj Comput Mater 9, 34 (2023). https://doi.org/10.1038/s41524-023-00985-x
7. Albert Suceava, John Hayden, Kyle P. Kelley, Yihuang Xiong, Benazir Fazlioglu-Yalcin, Ismaila Dabo, Susan Trolier-McKinstry, Jon-Paul Maria, and Venkatraman Gopalan, “Enhancement of second-order optical nonlinearities and nanoscale periodic domain patterning in ferroelectric boron-substituted aluminum nitride thin films,” Opt. Mater. Express 13, 1522-1534 (2023) https://doi.org/10.1364/OME.488459
8. Sebastian Calderon et al.Atomic-scale polarization switching in wurtzite ferroelectrics.Science 380,1034-1038(2023).DOI:1126/science.adh7670
9. Shelby S. Fields, Samantha T. Jaszewski, Megan K. Lenox, Jon F. Ihlefeld, Asymmetric Electrode Work Function Customization via Top Electrode Replacement in Ferroelectric and Field-Induced Ferroelectric Hafnium Zirconium Oxide Thin Films. Advanced Materials Interfaces, 20 January 2023, https://doi.org/10.1002/admi.202202232
10. Liu, Y., Vasudevan, R.K., Kelley, K.P. et al.Learning the right channel in multimodal imaging: automated experiment in piezoresponse force microscopy. npj Comput Mater 9, 34 (2023). https://doi.org/10.1038/s41524-023-00985-x
11. Yongtao Liu, Anna N. Morozovska, Eugene A. Eliseev, Kyle P. Kelley, Rama Vasudevan, Maxim Ziatdinov, Sergei V. Kalinin, Autonomous scanning probe microscopy with hypothesis learning: Exploring the physics of domain switching in ferroelectric materials, Patterns, Volume 4, Issue 3, 2023, 100704, ISSN 2666-3899, https://doi.org/10.1016/j.patter.2023.100704.
12. N. M. Nafiul Islam, Arnob Saha, Zhouhang Jiang, Kai Ni, Abhronil Sengupta; Hybrid stochastic synapses enabled by scaled ferroelectric field-effect transistors. Appl. Phys. Lett.20 March 2023; 122 (12): 123701. https://doi.org/10.1063/5.0132242
13. Antik Mallick, Megan K. Lenox, Thomas E. Beechem, Jon F. Ihlefeld, Nikhil Shukla; Oxygen vacancy contributions to the electrical stress response and endurance of ferroelectric hafnium zirconium oxide thin films.  Phys. Lett.27 March 2023; 122 (13): 132902.
14. Yongtao Liu, Jonghee Yang, Rama K. Vasudevan, Kyle P. Kelley, Maxim Diatdinov, Sergei V. Kalinin and Mahshid Ahmadi. Phys. Chem. Lett.2023, 14, 13, 3352–3359, Publication Date: March 30, 2023 https://doi.org/10.1021/acs.jpclett.3c00223
15. Yongke Yan, Liwei D. Geng, Li-Qian Cheng, Xiaotian Li, Haoyang Leng, Ke Wang, Bed Poudel, Amin Nozariasbmarz, Mohan Sanghadasa, Susan Trolier-McKinstry, Qi-Ming Zhang, Yu U. Wang, Shashank Priya, Correlation between cation order/disorder and the electrocaloric effect in the MLCCs of complex perovskite ferroelectrics, Acta Materialia, Volume 254, 2023, 118990, ISSN 1359-6454, https://doi.org/10.1016/j.actamat.2023.118990.
16. Sebastian Calderon et al.Atomic-scale polarization switching in wurtzite ferroelectrics. Science 380,1034-1038(2023).DOI:1126/science.adh7670
17. Leonard Jacques, Gyunghyun Ryu, Devin Goodling, Saiphaneendra Bachu, Rojin Taheri, Pedram Yousefian, Smitha Shetty, Betul Akkopru-Akgun, Clive Randall, Nasim Alem, Jon-Paul Maria, Susan Trolier-McKinstry; Wake up and retention in zinc magnesium oxide ferroelectric films. Journal of Applied Physics14 June 2023; 133 (22): 224102. https://doi.org/10.1063/5.0153750
18. Zu, R., Ryu, G., Kelley, K.P., Baksa, S.M., Jacques, L.C., Wang, B., Ferri, K., He, J., Chen, L.-Q., Dabo, I., Trolier-McKinstry, S., Maria, J.-P. and Gopalan, V. (2023), Large Enhancements in Optical and Piezoelectric Properties in Ferroelectric Zn_1-xMg_xO Thin Films through Engineering Electronic and Ionic Anharmonicities. Adv. Phys. Res. 2300003. https://doi.org/10.1002/apxr.202300003
19. Wanlin Zhu, Fan He, John Hayden, Jung In Yang, Pannawit Tipsawat, Jon-Paul Maria, Susan Trolier-McKinstry; Exceptional high temperature retention in Al₉₃B_0.07N films. Appl. Phys. Lett.5 June 2023; 122 (24): 242902. https://doi.org/10.1063/5.0152821
20. Lingyuan Gao, Robert B. Wexler, Ruixiang Fei and Andrew M. Rappe. Phys. Chem. C2023, 127, 12, 5931–5940. Publication Date: March 15, 2023 DOI: https://doi.org/10.1021/acs.jpcc.2c07844
21. Wenjie Li, Gagan K. Goyal, David Stokes, Lavanya Raman, Subrata Ghosh, Shweta Sharma, Amin Nozariasbmarz, Na Liu, Saurabh Singh, Yu Zhang, Bed Poudel, and Shashank Priya. ACS Applied Materials & Interfaces2023 15 (2), 2961-2970 DOI: 10.1021/acsami.2c19137

2022

1. Chengyang Zhang, Ravindra Singh Bisht, Amin Nozariasbmarz, Arnob Saha, Chan Su Han, Qi Wang, Yifan Yuan, Abhronil Sengupta, Shashank Priya, Shriram Ramanathan; Synthesis and electrical behavior of VO₂thin films grown on SrRuO₃ electrode layers. Journal of Vacuum Science & Technology A 1 July 2022; 40 (4): 043405. https://doi.org/10.1116/6.0001798
2. Eliseev, Eugene A. and Yelisieiev, Mykola E. and Kalinin, Sergei V. and Morozovska, Anna N., Observability of negative capacitance of a ferroelectric film: Theoretical predictions, Rev. B, Volume 105, issue = 17, May 2022, American Physical Society, 10.1103/PhysRevB.105.174110, https://link.aps.org/doi/10.1103/PhysRevB.105.174110
3. Park, T. J., Deng, S., Manna, S., Islam, A. N. M. N., Yu, H., Yuan, Y., Fong, D. D., Chubykin, A. A., Sengupta, A., Sankaranarayanan, S. K. R. S., Ramanathan, S., Complex Oxides for Brain-Inspired Computing: A Review.  Mater.2022, 2203352. https://doi.org/10.1002/adma.202203352
4. Ziatdinov, Maxim, Liu, Yongtao, Kelley, Kyle, Vasudevan, Rama, Kalinin, Sergei V., Bayesian Active Learning for Scanning Probe Microscopy: From Gaussian Processes to Hypothesis Learning, ACS Nano, 2022, 10.1021/acsnano.2c05303, https://doi.org/10.1021/acsnano.2c05303
5. Liu, Yongtao, Ziatdinov, Maxim, Kalinin, Sergei, V. Exploring Causal Physical Mechanisms via Non-Gaussian Linear Models and Deep Kernel    Learning: Applications for Ferroelectric Domain Structures. ACS Nano, 2022, 10.1021/acsnano.1c09059, https://www-webofscience-com.ezaccess.libraries.psu.edu/wos/woscc/full-record/WOS:000739351500001
6. Liu, Y., Kelley, K. P., Vasudevan, R. K., Zhu, W., Hayden, J., Maria, J.-P., Funakubo, H., Ziatdinov, M. A., Trolier-McKinstry, S., Kalinin, S. V., Automated Experiments of Local Non-Linear Behavior in Ferroelectric Materials. Small 2022, 18, 2204130. https://doi.org/10.1002/smll.202204130
7. Sora Lee, Xiaotian Zhang, Thomas Mc Knight, Bhavesh Ramkorun, Huaiyu Wang, Venkatraman Gopalan, Joan M. Redwing and Thomas N. Jackson, 2022, 2D Materials, 1088/2053-1583/ac5b17, https://iopscience.iop.org/article/10.1088/2053-1583/ac5b17
8. Morozovska, Anna N. and Eliseev, Eugene A. and Biswas, Arpan and Shevliakova, Hanna V. and Morozovsky, Nicholas V. and Kalinin, Sergei V., Chemical control of polarization in thin strained films of a multiaxial ferroelectric: Phase diagrams and polarization rotation, Physical Review B, 2022, https://doi.org/10.1103/PhysRevB.105.094112
9. Fields, S. S., Cai, T., Jaszewski, S. T., Salanova, A., Mimura, T., Heinrich, H. H., Henry, M. D., Kelley, K. P., Sheldon, B. W., Ihlefeld, J. F., Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films.  Electron. Mater.2022, 8, 2200601. https://doi.org/10.1002/aelm.202200601
10. Morozovska, Anna N., Eliseev, Eugene, A., Kelley, Kyle and Kalinin, Sergei, V. Temperature-Assisted Piezoresponse Force Microscopy: Probing Local Temperature-Induced Phase Transitions in Ferroics. Physical Review Applied, 2022. https://doi.org/10.1103/PhysRevApplied.18.024045
11.  Liu, Y., Kelley, K. P., Funakubo, H., Kalinin, S. V., Ziatdinov, M., Exploring Physics of Ferroelectric Domain Walls in Real Time: Deep Learning Enabled Scanning Probe Microscopy.  Sci.2022, 9, 2203957. https://doi.org/10.1002/advs.202203957
12. Songsong Zhou et al. Strain-induced antipolar phase in hafnia stabilizes robust thin-film ferroelectricity. Adv.8 ,eadd5953 (2022).DOI:10.1126/sciadv.add5953
13. Gupta, S. Phase transformation and growth mechanism of RF sputtered ferroelectric lead scandium tantalate (PbSc₅Ta_0.5O₃) films. J Am Ceram Soc. 2023; 106: 2209– 2224. https://doi.org/10.1111/jace.18874
14. Jon F. Ihlefeld, Samantha T. Jaszewski, Shelby S. Fields; A Perspective on ferroelectricity in hafnium oxide: Mechanisms and considerations regarding its stability and performance.  Phys. Lett.12 December 2022; 121 (24): 240502. https://doi.org/10.1063/5.0129546
15. Kelley, K. P., Kalinin, S. V., Eliseev, E., Raghuraman, S., Jesse, S., Maksymovych, P., Morozovska, A. N., Probing Temperature-Induced Phase Transitions at Individual Ferroelectric Domain Walls.  Electron. Mater.2023, 9, 2200552. https://doi.org/10.1002/aelm.202200552
16. Kim, J., Kumar, A., Qi, Y. et al.Coupled polarization and nanodomain evolution underpins large electromechanical responses in relaxors.  Phys. 18, 1502–1509 (2022). https://doi.org/10.1038/s41567-022-01773-y\
17. Yongtao Liu, Shelby S. Fields, Takanori Mimura, Kyle P. Kelley, Susan Trolier-McKinstry, Jon F. Ihlefeld, Sergei V. Kalinin; Exploring leakage in dielectric films via automated experiments in scanning probe microscopy.  Phys. Lett.2 May 2022; 120 (18): 182903. https://doi.org/10.1063/5.0079217
18. Derrick S. H. Liu, Maria Hilse, Roman Engel-Herbert; Desorption characteristics of selenium and tellurium thin films. Journal of Vacuum Science & Technology A1 September 2022; 40 (5): 053407. https://doi.org/10.1116/6.0002013
19. Yu, A. N. M. N. Islam, S. Mondal, A. Sengupta and S. Ramanathan, “Switching Dynamics in Vanadium Dioxide-Based Stochastic Thermal Neurons,” in IEEE Transactions on Electron Devices, vol. 69, no. 6, pp. 3135-3141, June 2022, doi: 10.1109/TED.2022.3168248.
20. Amin Nozariasbmarz, Ravi Anant Kishore, Wenjie Li, Yu Zhang, Luyao Zheng, Mohan Sanghadasa, Bed Poudel, Shashank Priya; Thermoelectric coolers for high-power-density 3D electronics heat management.  Phys. Lett.18 April 2022; 120 (16): 164101. https://doi.org/10.1063/5.0088129
21. Sergei V Kalinin et al2022 Nanotechnology 33 DOI : 10.1088/1361-6528/ac2f5b
22. Liu, Y., Kelley, K.P., Vasudevan, R.K. et al.Experimental discovery of structure–property relationships in ferroelectric materials via active learning. Nat Mach Intell 4, 341–350 (2022). https://doi.org/10.1038/s42256-022-00460-0
23. Anna N. Morozovska, Hanna V. Shevliakova, Yaroslava Yu. Lopatina, Mykola E. Yelisieiev, Galina I. Dovbeshko, Marina V. Olenchuk, George S. Svechnikov, Sergei V. Kalinin, Yunseok Kim, and Eugene A. Eliseev. Size Effect of Local Current-Voltage Characteristics of MX₂ Nanoflakes: Local Density of States Reconstruction from Scanning Tunneling Microscopy Experiments. Phys. Rev. Applied 17, 064037 – Published 21 June 2022. DOI: https://doi.org/10.1103/PhysRevApplied.17.064037
24. S. Thomann, K. Ni and H. Amrouch, “Joint Modeling of Multi-Domain Ferroelectric and Distributed Channel towards Unveiling the Asymmetric Abrupt DC Current Jump in Ferroelectric FET,” ESSDERC 2022 – IEEE 52nd European Solid-State Device Research Conference (ESSDERC), Milan, Italy, 2022, pp. 336-339, DOI: 10.1109/ESSDERC55479.2022.9947176
25. Anna N. Morozovska, Sergei V. Kalinin, Mykola E. Yelisieiev, Jonghee Yang, Mahshid Admadi, Eugene A. Eliseev, Dean R. Evans, Dynamic control of ferroionic states in ferroelectric nanoparticles, ScienceDirect, 2022, DOI: https://doi.org/10.1016/j.actamat.2022.118138
26. Suguru Yoshida, Hirofumi Akamatsu, Alexandra S. Gibbs, Shogo Kawaguchi, Venkatraman Gopalan, Katsuhisa Tanaka and Koji Fujita. Mater.2022, 34, 14, 6492–6504, Publication Date: July 11, 2022,
    https://doi.org/10.1021/acs.chemmater.2c01245
27. Xiao et al., “On the Write Schemes and Efficiency of FeFET 1T NOR Array for Embedded Nonvolatile Memory and Beyond,” 2022 International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2022, pp. 13.6.1-13.6.4, doi: 10.1109/IEDM45625.2022.10019542.
28. Yu, T., Xu, Y., Deng, S. et al.Hardware functional obfuscation with ferroelectric active interconnects. Nat Commun 13, 2235 (2022). https://doi.org/10.1038/s41467-022-29795-3
29. Deng et al., “Compact Ferroelectric Programmable Majority Gate for Compute-in-Memory Applications,” 2022 International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2022, pp. 36.7.1-36.7.4, doi: 10.1109/IEDM45625.2022.10019400.
30. Jiang et al., “On the Feasibility of 1T Ferroelectric FET Memory Array,” in IEEE Transactions on Electron Devices, vol. 69, no. 12, pp. 6722-6730, Dec. 2022, doi: 10.1109/TED.2022.3216819.
31. Jiang et al., “Asymmetric Double-Gate Ferroelectric FET to Decouple the Tradeoff Between Thickness Scaling and Memory Window,” 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Honolulu, HI, USA, 2022, pp. 395-396, doi: 10.1109/VLSITechnologyandCir46769.2022.9830172.
32. Ni, O. Prakash, S. Thomann, Z. Zhao, S. Deng and H. Amrouch, “Suppressing Channel Percolation in Ferroelectric FET for Reliable Neuromorphic Applications,” 2022 IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA, 2022, pp. 1-8, doi: 10.1109/IRPS48227.2022.9764521.
33. Romakanta Bhattarai, Kai Ni and Xiao Shen, Ferroelectric 2D antimony oxides with wide bandgaps, Journal of Materials Chemistry C, November, 2022. https://doi.org/10.1039/D2TC03343G

2021

1. Jao, N.; Xiao, Y.; Saha, A.K.; Gupta, S.K.; Narayanan, V. Design Space Exploration of Ferroelectric Tunnel Junction Toward Crossbar Memories IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 7, 115 – 122, (2021). [DOI: 10.1109/JXCDC.2021.3117566 ]  
2. Y. Xiao, S. Deng, Z. Zhao, V. Narayanan, and K. Ni, “Predictive Modeling of Ferroelectric Tunnel Junctions for Memory and Analog Weight Cell Applications,” 67th IEDM, 2021
3. Kalinin, S.V.; Steffes, J.J.; Liu, Y.; Huey, B.D.; Ziatdinov, M. Disentangling ferroelectric domain wall geometries and pathways in dynamic piezoresponse force microscopy via unsupervised machine learning Nanotechnology, 33, 055707, (2021). [DOI: 10.1088/1361-6528/ac2f5b ]  
4. Liu, Y.; Proksch, R.; Wong, C.Yin; Ziatdinov, M.; Kalinin, S.V. Disentangling Ferroelectric Wall Dynamics and Identification of Pinning Mechanisms via Deep Learning Advanced Materials, 33, 2103680, (2021). [DOI: 10.1002/adma.202103680 ]  
5. Shan Deng, Zijian Zhao, Santosh Kurinec, Kai Ni, Xiao Yi, Tongguang Yu, and Vijaykrishnan Narayanan, “Overview of Ferroelectric Memory Devices and Reliability Aware Design Optimization”, GLSVLSI’21 (Special Session invited Paper)
6. M. David Henry, Shelby Fields, Sean Smith, Paul Davids, and Jon Ihlefeld, “Wake up and Endurance of Ferroelectric Hf0.5Zr0.5O2 on NbN and Nb”, AVS 67th International Symposium and exhibition, Oct 2021.
7. Garg, C.; Chauhan, N.; Deng, S.; Khan, A.Islam; Dasgupta, S.; Bulusu, A.; Ni, K. Impact of Random Spatial Fluctuation in Non-Uniform Crystalline Phases on the Device Variation of Ferroelectric FET IEEE Electron Device Letters, 42, 1160 – 1163, (2021). [DOI: 10.1109/LED.2021.3087335 ]  
8. Saha, A.; Islam, A.N.M.Nafi; Zhao, Z.; Deng, S.; Ni, K.; Sengupta, A.Intrinsic synaptic plasticity of ferroelectric field effect transistors for online learning Applied Physics Letters, 119, 133701, (2021). [DOI: 10.1063/5.0064860 ]  
9. Chen, Y.; Zhirnov, V.; Sasan, A.; Savidis, I.; Deng, S.; Zhao, Z.; Kurinec, S.; Ni, K.; Xiao, Y.; Yu, T.; Narayanan, V. Overview of Ferroelectric Memory Devices and Reliability Aware Design Optimization GLSVLSI ’21: Great Lakes Symposium on VLSI 2021Proceedings of the 2021 on Great Lakes Symposium on VLSI, (2021). [DOI: 10.1145/3453688.3461743 ]  
10. Liu, Y.; Vasudevan, R.K.; Kelley, K.K.; Kim, D.; Sharma, Y.; Ahmadi, M.; Kalinin, S.V.; Ziatdinov, M. Decoding the shift-invariant data: applications for band-excitation scanning probe microscopy, Machine Learning: Science and Technology, 2, 045028, (2021). [DOI: 10.1088/2632-2153/ac28de ]  
11. Ferri, K.; Bachu, S.; Zhu, W.; Imperatore, M.; Hayden, J.; Alem, N.; Giebink, N.; Trolier-McKinstry, S.; Maria, J.P. Ferroelectrics everywhere: Ferroelectricity in magnesium substituted zinc oxide thin films Journal of Applied Physics, 130, 044101, (2021). [DOI: 10.1063/5.0053755 ] 
12. Qi, Y.; Rappe, A.M.Widespread Negative Longitudinal Piezoelectric Responses in Ferroelectric Crystals with Layered Structures Physical Review Letters, 126, 217601, (2021). [DOI: 10.1103/PhysRevLett.126.217601 ]  
13. Hayden, J.; Hossain, M.Delower; Xiong, Y.; Ferri, K.; Zhu, W.; Imperatore, M.Vincenzo; Giebink, N.; Trolier-McKinstry, S.; Dabo, I.; Maria, J.P. Ferroelectricity in boron-substituted aluminum nitride thin films Phys. Rev. Materials, 5, 4412 , (2021). [DOI: 10.1103/PhysRevMaterials.5.044412 ]  
14. Fields, S.S.; Smith, S.W.; Jaszewski, S.T.; Mimura, T.; Dickie, D.A.; Esteves, G.; Henry, D.; Wolfley, S.L.; Davids, P.S.; Ihlefeld, J.F. Wake-up and fatigue mechanisms in ferroelectric Hf0.5 Zr0.5O2 films with symmetric RuO2 electrodes Journal of Applied Physics, 130, 134101, (2021). [DOI: 10.1063/5.0064145 ]